You are Here | Welcome | Working Groups | WG3: Simulation of HIPP processes

WG3: Simulation of HIPP processes

  • Simulation of plasma properties (WG1, WG2)
  • Simulation of HIPP processes (WG2, WG4, WG5)

Combining the knowledge of pulse generation and results of process characterisation will allow a deeper understanding. The transport of uncharged particles in a sputtering environment is relatively straightforward. Charged particles on the other hand can be affected by magnetic or electrical fields present in the process equipment. The magnetic field in magnetron sputtering is usually relatively weak and heavy ions are not directly affected. However, since electrons are indeed magnetised they can affect the ions since these two species are closely coupled. This can be seen as a problem in using this technology, but can also be utilised as an advantage since post-ionised and ionised gas atoms can be directed in different ways by designing the magnetic field appropriately. DC magnetron sputtering, with neutral deposition atoms, is reasonable well simulated today, but pulsed ionised sputtering is a new challenge.

A short-term ambition in this area is to obtain an elementary theoretical understanding together with a detailed experimental mapping of the phenomena of charged particle transport in magnetron plasmas. In the longer perspective, a model of the pulsed discharge is a vision that would allow detailed simulations of the discharge. Basing on the gained knowledge simulation of HIPP plasmas and processes will become available. Confirmation of the proposed models will be yielded by experiments. Creating models describing HIPP processes prediction of properties and process parameters becomes available reducing development time and costs. This could then be used as a predictive tool for Academia and industry. Therefore WG3 will provide theoretical models the physics of HIPP processes and simulation tools for modelling of the plasmas and industrial HIPP processes.

Last modified on: 2017-05-28 00:34:16 CEST
All content copyright by Fraunhofer IST